OyaYansa Posted December 26, 2017 Share Posted December 26, 2017 These days we are starting to learn more about the characteristics of the Galaxy S9 and the S9 +, the new flagships of the South Korean company. One of them would be in the technical section to have the new Qualcomm Snapdragon 845 processor. It was expected to be manufactured with a low power 10 nm Low Power Early (LPE) FinFET processor, but it might not be so after knowing that Samsung The production of a second generation of 10 nm FinFET chips has begun. With respect to what would become the new flagship of the Korean company, the Galaxy S9, recent information indicates that it will stand out for incorporating 3D facial recognition - similar to the Face ID of the iPhone X - although it will still have fingerprint scanner located now under the camera, a place that does not convince users. Especificaciones Sistema operativo Android 8.0 Tamaño 5.8 pulgadas Resolución 2960x1440 Cámaras 12.0/8.0 mpx Capacidad 3300 mAh Memoria Interna 64 GB Samsung has also announced that its new manufacturing line, S3, located in Hwaseong (Korea), is ready to increase the production of process technologies, even 10 nm or less. For some time now, the company's plans have focused on developing 4-nanometer processors for their devices within three years. S3 is the third factory of Foundry Businees of Samsung, after S1 in Giheung (Korea) and S2 in Austin (United States). Samsung's 7 nm FinFET process technology with EUV (Extreme Ultra Violet) will also be mass produced in S3. Link to comment Share on other sites More sharing options...
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